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BLF878
UHF power LDMOS transistor
Rev. 02 -- 15 June 2009 Product data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.
Table 1. Typical performance RF performance at VDS = 42 V in a common-source 860 MHz narrowband test circuit. Mode of operation f (MHz) CW, class AB 2-Tone, class AB PAL BG DVB-T (8k OFDM)
[1] [2]
PL (W) 300 300 (peak sync.) [1]
PL(PEP) PL(AV) Gp (W) 300 (W) 75 21 21 21 21
D 60 46 45 32
IMD3 -35 -32 [2]
(dB) (%) (dBc)
860 860 (ch69) 858
f1 = 860; f2 = 860.1 -
Black video signal, sync expansion: input sync = 33 %; output sync 27 %. Measured [dBc] with delta marker at 4.3 MHz from center frequency.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efficiency = 46 % N Third order intermodulation distortion = -35 dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Average output power = 75 W N Power gain = 21 dB N Drain efficiency = 32 % N Third order intermodulation distortion = -32 dBc (4.3 MHz from center frequency)
NXP Semiconductors
BLF878
UHF power LDMOS transistor
I I I I I I I I I I
Integrated ESD protection Advanced flange material for optimum thermal behavior and reliability Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input and output matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
1.3 Applications
I Communication transmitter applications in the UHF band I Industrial applications in the UHF band
2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source
[1]
Simplified outline
1 2 5
Graphic symbol
1
3 3 4 4 5
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Name Description BLF878 Version Type number Package flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
BLF878_2
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Product data sheet
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NXP Semiconductors
BLF878
UHF power LDMOS transistor
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Tstg Tj Parameter drain-source voltage gate-source voltage storage temperature junction temperature Conditions Min -0.5 -65 Max 89 +11 +150 200 Unit V V C C
5. Thermal characteristics
Table 5. Symbol Rth(j-c) Rth(c-h)
[1] [2]
Thermal characteristics Parameter thermal resistance from junction to case thermal resistance from case to heatsink Conditions Tcase = 80 C; PL(AV) = 150 W
[1]
Typ 0.23 0.15
Unit K/W K/W
[2]
Rth(j-c) is measured under RF conditions. Rth(c-h) is dependent on the applied thermal compound and clamping/mounting of the device.
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) Ciss Coss Crss
[1] [2]
Conditions
[1] [1]
Min Typ Max 89 1.4 35 [1] [1]
Unit V A A nA S m pF pF pF
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.25 mA gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance VDS = 10 V; ID = 225 mA VGS = 0 V; VDS = 42 V VGS = VGSth + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 11.2 A
1.9 39 110 190 60 2
105.5 V 2.4 1.4 140 -
-
15.5 -
drain-source on-state resistance VGS = VGSth + 3.75 V; ID = 7.6 A input capacitance output capacitance reverse transfer capacitance VGS = 0 V; VDS = 40 V; f = 1 MHz VGS = 0 V; VDS = 40 V; f = 1 MHz VGS = 0 V; VDS = 40 V; f = 1 MHz
[2]
[2]
[2]
ID is the drain current. Capacitance values without internal matching.
BLF878_2
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Product data sheet
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BLF878
UHF power LDMOS transistor
350 Coss (pF) 250
001aai075
150
50 0 20 40 VDS (V) 60
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; typical values per section; capacitance value without internal matching
7. Application information
Table 7. RF performance in a common-source narrowband 860 MHz test circuit Tcase = 25 C unless otherwise specified. Mode of operation 2-Tone, class AB DVB-T (8k OFDM)
[1] [2]
f (MHz) f1 = 860; f2 = 860.1 858
VDS IDq (V) 40 40 (A)
PL(PEP) (W)
PL(AV) Gp (W) 75
D
IMD3 (dBc)
(dB) (%)
1.4[1] 300 1.4[1] -
> 18 > 42 < -31 > 18 > 29 < -29 [2]
IDq = 1.4 A for total device. Measured [dBc] with delta marker at 4.3 MHz from center frequency.
BLF878_2
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BLF878
UHF power LDMOS transistor
7.1 Narrowband RF figures
7.1.1 CW
001aai076
24 Gp (dB) 22 Gp
(2) (2) (1)
80 D (%) 60
20
D
40
(1)
18
20
16 0 100 200 300 PL (W)
0 400
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V
Fig 2.
CW power gain and drain efficiency as a function of load power; typical values
BLF878_2
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Product data sheet
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BLF878
UHF power LDMOS transistor
7.1.2 2-Tone
001aai077 001aai078
22 Gp (dB) 20 Gp
(1) (2)
60 D (%) 40
-10 IMD3 (dBc) -20
D
(2) (1)
-30
(1) (2)
18
20 -40
16 0 100 200
0 300 400 PL(AV) (W)
-50 0 100 200 300 400 PL(AV) (W)
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V
Fig 3.
2-Tone power gain and drain efficiency as functions of average load power; typical values
Fig 4.
2-Tone third order intermodulation distortion as a function of average load power; typical values
BLF878_2
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Product data sheet
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BLF878
UHF power LDMOS transistor
7.1.3 DVB-T
001aai079 001aai080
23 Gp (dB) 21 Gp
60 D (%) 40
-15 IMD3 (dBc) -25
(2) (1)
D 19
(1) (2)
20
-35
(1) (2)
17 0 50 100 150
0 200 250 PL(AV) (W)
-45 0 50 100 150 200 250 PL(AV) (W)
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V
IDq = 1.4 A; measured in a common source narrowband 860 MHz test circuit. (1) VDS = 40 V (2) VDS = 42 V
Fig 5.
DVB-T power gain and drain efficiency as functions of average load power; typical values
Fig 6.
DVB-T third order intermodulation distortion as a function of average load power; typical values
BLF878_2
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Product data sheet
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BLF878
UHF power LDMOS transistor
7.2 Broadband RF figures
7.2.1 2-Tone
001aai081 001aai082
22 Gp (dB) 18
(1) (2) (2) (1)
80 D (%) 60
0 IMD3 (dBc) -20
(1) (2)
Gp
D 14
40
-40
10 400
500
600
700
20 800 900 f (MHz)
-60 400
500
600
700
800 900 f (MHz)
PL(AV) = 150 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V (2) VDS = 42 V
PL(AV) = 150 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V (2) VDS = 42 V
Fig 7.
2-Tone power gain and drain efficiency as a function of frequency; typical values
Fig 8.
2-Tone third order intermodulation distortion as a function of frequency; typical values
BLF878_2
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Product data sheet
Rev. 02 -- 15 June 2009
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BLF878
UHF power LDMOS transistor
7.2.2 DVB-T
001aai083 001aai084
22 Gp (dB) 18 D
(2) (1)
60 D (%) 40
0 IMD3 (dBc) -20
(1) (2)
Gp
(1) (2)
14
20
-40
10 400
500
600
700
0 800 900 f (MHz)
-60 400
500
600
700
800 900 f (MHz)
PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V (2) VDS = 42 V
PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. (1) VDS = 40 V (2) VDS = 42 V
Fig 9.
DVB-T power gain and drain efficiency as functions of frequency; typical values
10 PAR (dB) 9
Fig 10. DVB-T third order intermodulation distortion as a function of frequency; typical values
001aai085
(2) (1)
8
7
6
5 400
500
600
700
800 900 f (MHz)
PL(AV) = 77 W; IDq = 1.4 A; measured in a common source broadband test circuit as described in Section 8. PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. (1) VDS = 40 V (2) VDS = 42 V
Fig 11. DVB-T PAR at 0.1 % and at 0.01 % probability on the CCDF as function of frequency; typical values
BLF878_2
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Product data sheet
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NXP Semiconductors
BLF878
UHF power LDMOS transistor
7.3 Ruggedness in class-AB operation
The BLF878 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 42 V; f = 860 MHz at rated power.
7.4 Impedance information
ZL drain Zi gate
001aai086
Fig 12. Definition of transistor impedance Table 8. Typical push-pull impedance Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W. f MHz 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900
BLF878_2
Zi 0.933 - j1.376 0.959 - j0.986 0.988 - j0.628 1.020 - j0.295 1.057 + j0.017 1.097 + j0.314 1.143 + j0.598 1.194 + j0.871 1.251 + j1.137 1.315 + j1.397 1.388 + j1.652 1.470 + j1.903 1.563 + j2.152 1.668 + j2.398 1.788 + j2.642 1.925 + j2.885 2.082 + j3.125 2.262 + j3.362 2.470 + j3.594 2.711 + j3.816 2.989 + j4.025 3.310 + j4.213 3.680 + j4.369 4.103 + j4.478 4.580 + j4.519
ZL 6.431 - j4.296 6.889 - j3.911 7.237 - j3.476 7.475 - j3.017 7.610 - j2.559 7.652 - j2.120 7.614 - j1.713 7.512 - j1.348 7.359 - j1.031 7.168 - j0.762 6.949 - j0.542 6.712 - j0.368 6.465 - j0.237 6.214 - j0.145 5.962 - j0.089 5.714 - j0.064 5.472 - j0.066 5.238 - j0.093 5.012 - j0.141 4.796 - j0.207 4.590 - j0.289 4.394 - j0.385 4.208 - j0.493 4.031 - j0.611 3.864 - j0.737
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Product data sheet
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NXP Semiconductors
BLF878
UHF power LDMOS transistor
Table 8. Typical push-pull impedance ...continued Simulated Zi and ZL device impedance; impedance info at VDS = 42 V and PL(PEP) = 300 W. f MHz 925 950 975 1000 Zi 5.103 + j4.467 5.656 + j4.291 6.205 + j3.963 6.696 + j3.463 ZL 3.706 - j0.871 3.556 - j1.011 3.415 - j1.157 3.281 - j1.308
7.5 Reliability
106 Years 105
001aai087
104
103
102
10
(1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11)
1 0 4 8 12 16 20 IDS(DC) (A) 24
TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) x 1 / . (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C
Fig 13. BLF878 electromigration (IDS(DC), total device)
BLF878_2
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Product data sheet
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NXP Semiconductors
BLF878
UHF power LDMOS transistor
8. Test information
Table 9. List of components For test circuit, see Figure 14, Figure 15 and Figure 16. Component B1, B2 C1, C2 C3, C9 C4 C5, C7, C8 C6 C10 C11, C12 C13, C14 C15, C16 C17, C18 C20 C21 C22 C23 C24 C25, C26, C27 C28, C29 C30, C31 L1 L2 L3 L4 L5, L23 L6 L7 L20 L21 L22 R1, R2 R3, R4 R5, R6 R7, R8
[1] [2] [3] [4]
Description semi rigid coax multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline resistor potentiometer resistor resistor
Value 25 ; 43.5 mm 8.2 pF 3.9 pF 2.7 pF 6.8 pF 2.2 pF 47 pF 100 pF 100 pF 10 F 470 F; 63 V 15 pF 0.6 pF to 4.5 pF 11 pF 3.9 pF 4.7 pF 100 pF 560 pF 10 F 5.6 10 k 10 k 1 k
[4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [3] [3] [3] [3] [2] [3] [1] [2] [2] [1] [2] [2] [1] [2]
Remarks EZ90-25-TP
TDK C570X7R1H106KT000N or capacitor of same quality.
Tekelec
(W x L) 24 mm x 13 mm (W x L) 15 mm x 24.5 mm (W x L) 5 mm x 21 mm (W x L) 2.4 mm x 6 mm (W x L) 2 mm x 43.5 mm (W x L) 2 mm x 4.5 mm (W x L) 5.5 mm x 24 mm (W x L) 15 mm x 5 mm (W x L) 3 mm x 39 mm (W x L) 2.4 mm x 5.7 mm long wires
American technical ceramics type 180R or capacitor of same quality. American technical ceramics type 100B or capacitor of same quality. American technical ceramics type 100A or capacitor of same quality. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m.
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BLF878_2
Product data sheet
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BLF878
UHF power LDMOS transistor
+ VG1(test)
R7
R3
C13
R5 C15 C30 C28
+ VD1(test)
C17
R1 50 C25 L22
C26 C24 B2 L23 L21 C22 C21 C20 C1 C2 C3 C4
C8 C5 C6 C9 B1 L3 C7 L5
C11 L4 C10 50
C29 C31
R2
C27
C12
L20 L1 L6 R6 L7
L2
+ VD2(test)
R4 C14 C16 C18
R6
+ VG2(test)
001aai088
See Table 9 for a list of components.
Fig 14. Class-AB common-source broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are drain and gate test voltages
L7 L6 L20 L23 L1 L2 L22 L21 L3 L5
80 mm
95 mm
95 mm
001aai089
Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier
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BLF878
UHF power LDMOS transistor
+VG1(test)
C13
+VD1(test)
C15 C17
R7 C28 R3 R5 R1 C25 R2 C31 R6 R4 R8 C29 B2 C27 C30 C26 C24 C23 C22
4 mm 18 mm
BLF878 C21
3.6 mm
C8 C2 C1 C4 C3 C7 C5 C6 C9
B1
C11 C12
C10
C20
7 mm 12 mm
C18 C14 C16
+VG2(test) 12 mm 22 mm
+VD2(test)
001aai090
See Table 9 for a list of components.
Fig 16. Component layout for class-AB common source amplifier
BLF878_2
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Product data sheet
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BLF878
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
D
A F
D1
U1 q H1 1 2
B C w2 w1 C A B c
H
U2 5 L A b e w3 3 4
p E1
E
Q
w3 0.25 0 5 scale Dimensions Unit(1) mm A b c D D1 E E1 e F H H1 L p 3.30 3.05 Q 3.02 35.56 2.77 41.02 10.03 q U1 U2 w1 0.25 w2 0.51 10 mm 0.010
max 5.77 11.81 0.15 31.55 31.37 10.29 10.29 1.969 17.50 25.53 3.86 nom 13.72 min 4.80 11.56 0.10 30.94 31.12 10.03 10.03 1.689 17.25 25.27 3.35
41.28 10.29
max 0.227 0.465 0.006 1.242 1.235 0.405 0.405 0.078 0.689 1.005 0.152 0.130 0.119 1.625 0.405 0.540 1.400 0.010 0.020 inches nom min 0.189 0.455 0.004 1.218 1.225 0.395 0.395 0.067 0.679 0.995 0.132 0.120 0.109 1.615 0.395 Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version SOT979A References IEC JEDEC JEITA European projection
sot979a_po
Issue date 08-04-24 08-09-04
Fig 17. Package outline SOT979A
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Product data sheet
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BLF878
UHF power LDMOS transistor
10. Abbreviations
Table 10. Acronym CW CCDF DVB DVB-T ESD IMD3 LDMOS LDMOST OFDM PAL PAR PEP RF TTF UHF VSWR Abbreviations Description Continuous Wave Complementary Cumulative Distribution Function Digital Video Broadcast Digital Video Broadcast - Terrestrial ElectroStatic Discharge Third order InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Orthogonal Frequency Division Multiplexing Phase Alternating Line Peak-to-Average power Ratio Peak Envelope Power Radio Frequency Time To Failure Ultra High Frequency Voltage Standing-Wave Ratio
11. Revision history
Table 11. BLF878_2 Modifications: Revision history Release date 20090615 Data sheet status Product data sheet Change notice Supersedes BLF878_1 Document ID
* * *
Table 4 on page 3: changed maximum value of VGS. Table 6 on page 3: changed several values. Table 7 on page 4: removed PAR specification. Preliminary data sheet -
BLF878_1
20081215
BLF878_2
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Product data sheet
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BLF878
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
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UHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.1.1 7.1.2 7.1.3 7.2 7.2.1 7.2.2 7.3 7.4 7.5 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Narrowband RF figures. . . . . . . . . . . . . . . . . . . 5 CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Broadband RF figures. . . . . . . . . . . . . . . . . . . . 8 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 DVB-T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Ruggedness in class-AB operation. . . . . . . . . 10 Impedance information . . . . . . . . . . . . . . . . . . 10 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 15 June 2009 Document identifier: BLF878_2

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